Imec demonstrates the extension of chemically amplified resists for High NA EUV lithography
Imec, in collaboration with ASML and material suppliers, has demonstrated the feasibility of using chemically amplified resists (CAR) for High NA EUV lithography. This breakthrough allows for patterning tight-pitch random logic structures, including lines/spaces down to 22nm pitch and vias at 28nm center-to-center distance, after a single High NA EUV exposure step. The results, presented at the 2026 SPIE Photomask Technology + EUV Lithography Conference, extend the use of established CAR technology for the A14/A10 logic technology nodes. This development is crucial for meeting the compute density demands of future AI and HPC systems, and supports the European NanoIC pilot line targeting beyond 2nm systems-on-chip.
Imec's success in extending chemically amplified resists (CAR) for High NA EUV lithography to 22nm pitch is a significant technical achievement for the semiconductor industry. This means that chipmakers can continue to rely on a proven, stable, and manufacturable resist technology for advanced logic nodes like A14/A10. For Asian foundries and chip designers, this could simplify the transition to High NA EUV, potentially reducing the learning curve and accelerating the adoption of these next-generation processes. The ability to use existing CAR technology for critical layers like metal-2 and via layers offers a cost and efficiency advantage. The collaboration with ASML and material suppliers points to a holistic approach in co-optimizing the patterning ecosystem. While this extends the life of CAR, the industry will still need to watch for the long-term performance and yield at even tighter pitches as the ångström era progresses. The immediate benefit is a clearer path for Asian manufacturers to scale their production capabilities for AI and HPC chips, but the reliance on a mature technology might also suggest a slower pace for truly novel resist material development.
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