Toshiba launches 3300V SiC MOSFET module
Toshiba Electronic Devices & Storage Corp (TDSC) has launched the IX800FXF2YMS4, a dual SiC MOSFET module. This new module targets industrial equipment, including railway vehicles and renewable energy systems. It features Toshiba’s third-generation SiC MOSFET chips, offering a 3300V drain–source voltage and an 800A drain current. The IX800FXF2YMS4 also boasts a 300kA2s I2t capability, enhancing surge current resistance for improved reliability in demanding applications.
Toshiba's new IX800FXF2YMS4 SiC MOSFET module is an incremental upgrade. It offers a 3300V, 800A rating and a 300kA2s surge current capability. This improves efficiency and reliability for industrial systems. The module's low 1.4V on-voltage and reduced switching losses (185mJ turn-on, 175mJ turn-off) are standard for third-generation SiC. This is not a breakthrough, but a steady product line expansion.
The module's adoption of the iXPLV package and silver sintering bonding aims for 175°C channel temperature operation. This targets robust industrial applications in Asia's growing rail and renewable energy sectors. Japanese industrial equipment manufacturers will benefit from a reliable domestic supplier. This reduces reliance on non-Asian suppliers for critical power components.
The real test for Toshiba is market penetration against established SiC players. Its expanded iXPLV lineup now totals four modules. Watch whether this new module secures significant design wins in high-power Asian industrial projects by late 2027. Without major uptake, this remains a niche product.
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